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| TLP2601 TOSHIBA Photocoupler GaAAs Ired & Photo-IC TLP2601 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer-Peripheral Interface Microprocessor System Interface Digital Isolation For A/D, D/A Conversion Direct Replacement For HCPL-2601 The TOSHIBA TLP2601 a photocoupler which combines a GaAAs IRed as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/s. * * * * * * Input current thresholds: IF = 5mA max. Isolation voltage: 2500Vrms min. Switching speed: 10MBd Common mode transient immunity: 1000V/s min. Guaranteed performance over temp.: 0C~70C UL Recognized: UL1577, file No. E67349 1 8 7 6 5 SHIELD Unit in mm TOSHIBA Weight: 0.54g 11-10C4 Pin Configuration (top view) Truth Table Input H L H L (positive logic) Enable H H L L Output L H H H 2 3 4 Schematic IF 2 VF 3 SHIELD IE VE 5 7 GND + ICC IO 8 6 VCC VO A 0.01 to 0.1F bypass capacitor must be connected between pins 8 and 5 (see Note 1). 1 2007-10-01 TLP2601 Recommended Operating Conditions Characteristic Input current, low level Input current, high level Supply voltage**, output High level enable voltage Low level enable voltage Fan out (TTL load) Operating temperature Symbol IFL IFH VCC VEH VEL N Topr Min. 0 6.3 (*) 4.5 2.0 0 0 Typ. Max. 250 20 5.5 VCC 0.8 8 70 Unit A mA V V V C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less. **This item denotes operating ranges, not meaning of recommended operating conditions. Absolute Maximum Ratings (no derating required) Characteristic Forward current Reverse voltage Output current Output voltage Detector Supply voltage (1 minute maximum) Enable input voltage (not to exceed VCC by more than 500mV) Output collector power dissipation Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (R.H. 60%,AC 1min., (Note 10) (**) Symbol IF VR IO VO VCC Rating 20 5 25 -0.5~7 7 Unit mA V mA V V LED VE Po Topr Tstg Tsol BVS 5.5 40 -40~85 -55~125 260 2500 3540 V mW C C C Vrms Vdc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (**) 1.6mm below seating plane. 2 2007-10-01 TLP2601 Electrical Characteristics (Ta = 0C ~70C unless otherwise noted) Characteristic High level output current Symbol IOH Test Condition VCC = 5.5V, VO = 5.5V IF = 250A, VE = 2.0V VCC = 5.5V, IF = 5mA VE = 2.0V, IOL(sinking) = 13mA VCC = 5.5V, IF = 0, VE = 0.5V VCC = 5.5V, IF = 10mA VE = 0.5V VCC = 5.5V, VE = 0.5V VCC = 5.5V, VE = 2.0V (Note 11) IF = 10mA, Ta = 25 IR = 10A, Ta = 25 VF = 0, f = 1MHz IF = 10mA Relative humidity = 45% Ta=25, t = 5 second (Note 10) VI-O = 3000Vdc, VI-O = 500V, R.H. 60% (Note 10) f = 1MHz, (Note 10) Min. Typ. 1 Max. 250 Unit A Low level output voltage High level supply current VOL ICCH 0.4 7 0.6 15 V mA Low level supply current ICCL 12 19 mA Low level enable current High level enable current High level enable voltage Low level enable voltage Input forward voltage Input reverse breakdown voltage Input capacitance Input diode temperature coefficient Input-output insulation leakage current Resistance (input-output) Capacitance (input-output) IEL IEH VEH VEL VF BVR CIN VF/TA 2.0 5 -1.6 -1 1.65 45 -2.0 -2.0 mA mA V 0.8 1.75 V V pF mV / C II-O 1 A RI-O CI-O 5x10 10 10 14 pF 0.6 (**)All typ.values are at VCC = 5V, Ta = 25C. 3 2007-10-01 TLP2601 Switching Characteristics (Ta = 25, VCC = 5 V) Characteristic Propagation delay time to high output level Propagation delay time to low output level Output rise time(10-90%) Output fall time(90-10%) Propagation delay time of enable from VEH to VEL Propagation delay time of enable from VEL to VEH Symbol tpLH Test Circuit Test Condition Min. Typ. 60 Max. 75 Unit ns RL = 350, CL = 15pF 1 IF = 7.5mA (Note 2), (Note 3), (Note 4)&(Note 5) tpHL tr tf tELH 60 30 30 25 75 ns ns ns ns RL = 350, CL = 15pF IF = 7.5mA 2 VEH = 3.0V VEL = 0.5V (Note 6)&(Note 7) VCM = 400V tEHL 25 ns Common mode transient immunity at high output level 3 Common mode transient immunity at low output level CML CMH RL = 350 VO(min.) = 2V IF = 0mA, VCM = 400V RL = 350 VO(max.) = 0.8V IF = 7.5mA, (Note 8) (Note 9) 1000 10000 V/s -1000 -10000 V/s 4 2007-10-01 TLP2601 Test Circuit 1. 5V tpHL and tpLH IF = 7.5mA IF = 3.75mA tpHL tpLH Output VO 1.5V VOH VOL Pulse generator ZO = 50 tr = 5ns IF Monitoring node 1 2 3 4 GND VCC 8 0.1F Bypass (*) CL Input IF 7 6 5 RL VO Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. tELH and tEHL Pulse generator ZO = 50 tr = 5ns 3.0V Input VE tEHL tELH Output VO 1.5V VOH VOL 1.5V 7.5mA dc IF Input VE monitoring node 5V 1 2 3 4 GND VCC 8 0.1F Bypass (*) CL 47 7 6 5 RL VO Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 3. Transient Immunity and Typ. Waveforms. 1 90% VCM VO Switch at A : IF = 0mA VO Switch at B : IF = 5mA VOL 10% tr 10% 90% tf 400V 0V B 5V VFF A IF 2 3 4 Pulse gen. ZO = 50 GND VCM VCC 8 7 6 5 0.1F Bypass RL VO 5V 5 2007-10-01 TLP2601 IF - V F 100 Ta = 25C -2.6 VF / Ta - IF 10 Forward voltage temperature coefficient VF /Ta (mV/C) -2.4 (mA) -2.2 -2.0 forward current IF 1 -1.8 0.1 -1.6 0.01 1.0 -1.4 0.1 1.2 1.4 1.6 1.8 0.3 1 3 10 30 Forward current IF (mA) Forward voltage VF (V) VO - IF 8 VCC = 5V Ta = 25C 6 IOH - Ta 100 IF = 250A 50 VCC = 5.5V VO = 5.5V (V) Output voltage VO 4 RL=350 1k 4k High level output current IOH (A) 3 4 5 6 30 10 5 3 2 0 0 1 2 Forward current IF (mA) 1 0 10 20 30 40 50 60 70 Ambient temperature Ta (C) VO - IF 8 VCC = 5V 0.5 VOL - Ta IF = 5mA RL=350 RL=4k VCC = 5.5V VE = 2V IOL=16mA 12.8mA 9.6mA 6.4mA (V) 4 Ta = 70C 0C Low level output voltage VOL (V) 6 6 Output voltage VO 0.4 2 0.3 0 0 1 2 3 4 5 Forward current IF (mA) 0.2 0 20 40 60 80 Ambient temperature Ta (C) 6 2007-10-01 TLP2601 tpHL, tpLH - IF 120 tpLH 100 RL=4k 100 120 tpHL, tpLH - Ta RL= 4k tpLH 350 1k 80 tpLH 350 60 tpHL 40 1k 4k Propagation delay time tpHL, tpLH (ns) 80 tpHL tpLH tpLH 1k 350 350 1k 4k Ta = 25C VCC = 5V 60 40 20 Propagation delay time tpHL, tpLH (ns) 20 VCC = 5 V IF = 7.5mA 0 5 7 9 11 13 15 17 19 Forward current IF (mA) 0 0 10 20 30 40 50 60 70 Ambient temperature Ta (C) tr, tf - Ta 320 VCC = 5V IF = 7.5mA tf 280 RL= 4k 80 VCC = 5V 70 VEH = 3V IF = 7.5mA tEHL, tELH - Ta 300 tELH RL= 4k (ns) Rise, fall time tr, tf 60 Enable propagation delay time tEHL, tELH (ns) 80 tf 1k 50 60 tf 350 40 tELH tELH 20 tEHL 10 1k 350 350 1k 4k 40 20 tr 350 1k 4k 30 0 0 10 20 30 40 50 60 70 Ambient temperature Ta (C) 0 0 10 20 30 40 50 60 70 Ambient temperature Ta (C) 7 2007-10-01 TLP2601 Notes 1. The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1F capacitor of larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package VCC and GND pins of each device. tpHL Propagation delay is measured from the 3.75mA level on the low to high transition of the input current pulse to the 1.5V level on the high to low transition of the output voltage pulse. Propagation delay is measured from the 3.75mA level on the high to low transition of the input current pulse to the 1.5V level on the low to high transition of the output voltage pulse. Fall time is measured from the 10% to the 90% levels of the high to low transition on the output pulse. Rise time is measured from the 90% to 10% levels of the low to high transition on the output pulse. Enable input propagation delay is measured from the 1.5V level on the low to high transition of the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse. Enable input propagation delay is measured from the 1.5V level on the high to low transition of the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse. The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., VOUT < 0.8V). Measured in volts per microsecond (V / s). The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the high state (i.e., VOUT > 2.0V). Measured in volts per microsecond(V / s). Volts/microsecond can be translated to sinusoidal voltages: V / s = (dv CM ) = fCM VCM (p.p.) dt Max. 2. 3. tpLH 4. tf 5. tr 6. tEHL 7. tELH 8. CML 9. CMH Example: VCM = 318Vpp when fCM = 1MHz using CML and CMH = 1000V / s data sheet specified minimum. 10. Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. No pull up resistor required as the device has an internal pull up resistor. 11. Enable input 8 2007-10-01 TLP2601 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01 |
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